US 11,990,442 B2
Semiconductor device and corresponding method
Cristina Somma, Milan (IT); Aurora Sanna, Milan (IT); and Damian Halicki, Agrate Brianza (IT)
Assigned to STMicroelectron S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Nov. 29, 2021, as Appl. No. 17/537,112.
Claims priority of application No. 102020000029210 (IT), filed on Dec. 1, 2020.
Prior Publication US 2022/0173064 A1, Jun. 2, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H01L 24/16 (2013.01) [H01L 23/49838 (2013.01); H01L 24/17 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/1713 (2013.01); H01L 2924/30101 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor die mounted at a die area of a package with an array of electrically-conductive balls providing electrical contact for the semiconductor die; and
a power channel to convey a power supply current to the semiconductor die;
wherein the power channel comprises:
at least one electrically-conductive connection plane layer extending in a longitudinal direction of the electrically-conductive connection plane layer between a distal end at the periphery of the package and a proximal end at the die area of the package; and
wherein said array of electrically-conductive balls includes a distribution of electrically-conductive balls distributed along the longitudinal direction of the electrically conductive connection plane layer;
said electrically-conductive connection plane layer comprising subsequent portions in said longitudinal direction between adjacent electrically-conductive balls in said distribution;
wherein said subsequent portions have respective electrical resistance values, wherein said respective electrical resistance values decrease from said distal end to said proximal end of the electrically-conductive connection plane layer;
wherein the electrically-conductive connection plane layer comprises voids formed therein between adjacent electrically-conductive balls in said distribution, wherein said voids define therebetween said subsequent portions of the electrically-conductive connection plane layer having respective electrical resistance values; and
wherein said voids filled with ground material.