US 11,990,440 B2
Structure and formation method of semiconductor device with conductive bumps
Hui-Min Huang, Taoyuan (TW); Ming-Da Cheng, Taoyuan (TW); Wei-Hung Lin, Xinfeng Township, Hsinchu County (TW); Chang-Jung Hsueh, Taipei (TW); Kai-Jun Zhan, Taoyuan (TW); and Yung-Sheng Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,174.
Prior Publication US 2023/0063127 A1, Mar. 2, 2023
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a semiconductor substrate;
an interconnection structure over the semiconductor substrate;
a first conductive pillar over the interconnection structure, wherein the first conductive pillar has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive pillar; and
a second conductive pillar over the interconnection structure, wherein the second conductive pillar is substantially as wide as the first conductive pillar, the second conductive pillar has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive pillar, the first conductive pillar is closer to a center point of the semiconductor substrate than the second conductive pillar, a bottom of the second protruding portion is wider than a bottom of the first protruding portion, and the bottoms of the first protruding portion and the second protruding portion are substantially level with each other.