US 11,990,433 B2
Bond pad structure coupled to multiple interconnect conductive\ structures through trench in substrate
Ming Chyi Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 2, 2021, as Appl. No. 17/366,556.
Claims priority of provisional application 63/178,064, filed on Apr. 22, 2021.
Prior Publication US 2022/0344291 A1, Oct. 27, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/05 (2013.01) [H01L 23/49822 (2013.01); H01L 23/49844 (2013.01); H01L 24/03 (2013.01); H01L 25/0657 (2013.01); H01L 2224/03001 (2013.01); H01L 2224/033 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05573 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate;
an interconnect structure arranged on a frontside of the substrate and comprising multiple interconnect conductive structures embedded within an interconnect dielectric structure;
a bonding structure arranged on a backside of the substrate; a bond pad structure arranged on the backside of the substrate and extending completely through the substrate to contact the multiple interconnect conductive structures, wherein the bond pad structure comprises:
a backside horizontal portion arranged on the backside of the substrate and directly below the bonding structure;
a vertical portion arranged on inner sidewalls of the substrate; and
a frontside horizontal portion arranged over the multiple interconnect conductive structures; and
a barrier layer arranged directly between the bond pad structure and the multiple interconnect conductive structures.