US 11,990,430 B2
Bonding structures of integrated circuit devices and method forming the same
Chen-Yu Tsai, Hsinchu (TW); Ku-Feng Yang, Baoshan Township (TW); and Wen-Chih Chiou, Zhunan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 26, 2021, as Appl. No. 17/186,742.
Claims priority of provisional application 63/142,534, filed on Jan. 28, 2021.
Prior Publication US 2022/0238466 A1, Jul. 28, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 24/05 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 2224/03013 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0355 (2013.01); H01L 2224/03612 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/2781 (2013.01); H01L 2224/27831 (2013.01); H01L 2224/29006 (2013.01); H01L 2224/29027 (2013.01); H01L 2224/29028 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method comprising:
forming a conductive pad over an interconnect structure of a wafer;
forming a capping layer over the conductive pad;
forming an anti-reflective coating over the capping layer;
depositing a dielectric layer over the anti-reflective coating;
etching the dielectric layer to form an opening in the dielectric layer, wherein the capping layer is exposed to the opening;
performing a wet-cleaning process on the wafer, wherein during the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process;
depositing a conductive diffusion barrier extending into the opening and penetrating through the anti-reflective coating; and
depositing a conductive material over the conductive diffusion barrier.