US 11,990,424 B2
Selective EMI shielding using preformed mask
HunTeak Lee, Gyeongi-do (KR); KyungHwan Kim, Incheon (KR); HeeSoo Lee, Kyunggi-do (KR); ChangOh Kim, Incheon (KR); KyoungHee Park, Seoul (KR); JinHee Jung, Incheon (KR); OMin Kwon, Gyeonggi-do (KR); JiWon Lee, Seoul (KR); and YuJeong Jang, Seoul (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Apr. 19, 2023, as Appl. No. 18/303,308.
Application 18/303,308 is a continuation of application No. 16/950,295, filed on Nov. 17, 2020, granted, now 11,664,327.
Prior Publication US 2023/0275034 A1, Aug. 31, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/49822 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a semiconductor package including a substrate and an encapsulant deposited over a first portion of the substrate, wherein the encapsulant includes a sloped surface oriented toward a second portion of the substrate;
disposing a mask over the second portion of the substrate, wherein the mask includes a sloped surface oriented toward the encapsulant, and wherein an area between the sloped surface of the encapsulant and the sloped surface of the mask remains devoid of the encapsulant;
forming a shielding layer over the semiconductor package and mask; and
removing the mask after forming the shielding layer.