US 11,990,423 B2
Magnetic shielding material with insulator-coated ferromagnetic particles
Tsung-Hsing Lu, Hsinchu (TW); Pei-Haw Tsao, Hsinchu (TW); and Li-Huan Chu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 28, 2022, as Appl. No. 17/851,927.
Application 17/851,927 is a continuation of application No. 17/076,544, filed on Oct. 21, 2020, granted, now 11,404,383.
Application 17/076,544 is a continuation of application No. 16/405,642, filed on May 7, 2019, granted, now 10,892,230, issued on Jan. 21, 2021.
Claims priority of provisional application 62/711,997, filed on Jul. 30, 2018.
Prior Publication US 2022/0336370 A1, Oct. 20, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/552 (2006.01); H01L 23/495 (2006.01); H05K 9/00 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 23/4952 (2013.01); H05K 9/0086 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor die;
a mixture on a first portion of the semiconductor die and having:
a plurality of first ferromagnetic particles;
an insulating coating encapsulating each of the plurality of ferromagnetic particles; and
a matrix containing the first ferromagnetic particles; and
a matrix of epoxy material on a second portion of the semiconductor die and having a plurality of second ferromagnetic particles, wherein the mixture is non-conductive at a particle volume to mixture volume ratio (PMR) between 10% to 80% and the matrix of epoxy material having a plurality of second ferromagnetic particles is conductive at a PMR that is lower than the PMR at which the mixture is non-conductive.