CPC H01L 23/552 (2013.01) [H01L 21/4871 (2013.01); H01L 21/50 (2013.01); H01L 23/3121 (2013.01)] | 23 Claims |
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first electrical component over the substrate;
disposing a second electrical component over the substrate;
forming a first metal bar by,
providing a carrier,
disposing a mask over the carrier,
forming an opening in the mask,
sputtering a metal layer over the mask, and
removing the mask to leave the first metal bar on the carrier; and
disposing the first metal bar over the substrate between the first electrical component and the second electrical component.
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