US 11,990,404 B2
Heat dissipation for semiconductor devices and methods of manufacture
Chen-Fong Tsai, Hsinchu (TW); Cheng-I Chu, Taipei (TW); Jyh-Cherng Sheu, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2021, as Appl. No. 17/381,583.
Claims priority of provisional application 63/184,506, filed on May 5, 2021.
Prior Publication US 2022/0359369 A1, Nov. 10, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 23/367 (2006.01); H01L 23/46 (2006.01); H01L 23/528 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 23/3672 (2013.01); H01L 23/46 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first transistor structure;
a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure comprising front-side conductive lines;
a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure comprising backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and
a first heat dissipation substrate coupled to the backside interconnect structure.