US 11,990,373 B2
Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package
Toyoji Sawada, Yokohama (JP)
Assigned to SOCIONEXT INC., Kanagawa (JP)
Filed by SOCIONEXT INC., Kanagawa (JP)
Filed on Feb. 28, 2023, as Appl. No. 18/176,143.
Application 18/176,143 is a division of application No. 17/383,162, filed on Jul. 22, 2021, granted, now 11,621,193.
Claims priority of application No. 2020-127200 (JP), filed on Jul. 28, 2020.
Prior Publication US 2023/0207391 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/268 (2013.01); H01L 21/4853 (2013.01); H01L 21/563 (2013.01); H01L 22/32 (2013.01); H01L 23/3185 (2013.01); H01L 23/544 (2013.01); H01L 24/16 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/35121 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for producing a semiconductor device, the method comprising:
removing a first pad located in a first area of a first scribe area of a semiconductor wafer by emitting laser beam along a first direction, the first scribe area extending in the first direction in a plan view, the first area extending in the first direction in a plan view; and
dicing a second area of the first scribe area of the semiconductor wafer after removing the first pad, the wafer including a circuit area, the second area extending in the first direction in a plan view, and the first area being located between the second area and the circuit area in a second direction which is different from the first direction in a plan view,
wherein the first area of the first scribe area is separated from the second area of the first scribe area in a plan view.