CPC H01L 21/76883 (2013.01) [H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first layer of insulative material;
a second layer of insulative material over the first layer;
an electrically conductive feature extending through the first layer; and
an electrically conductive via extending through the second layer and electrically coupled to the electrically conductive feature, wherein the electrically conductive via includes a pair of generally parallel first sidewalls, and wherein the electrically conductive via extends along an axis that is slanted relative to the first layer of insulative material.
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