US 11,990,359 B2
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Takatomo Yamaguchi, Toyama (JP); Hidenari Yoshida, Toyama (JP); and Kenji Ono, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 15, 2021, as Appl. No. 17/476,151.
Application 17/476,151 is a continuation of application No. PCT/JP2019/011456, filed on Mar. 19, 2019.
Prior Publication US 2022/0005717 A1, Jan. 6, 2022
Int. Cl. H01L 21/677 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/67778 (2013.01) [H01L 21/324 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner;
(b) repeatedly performing a set comprising:
(b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and
(b-2) charging one or more of the substrates into the one or more of the slots; and
(c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.