US 11,990,350 B2
Semiconductor devices with flexible reinforcement structure
Owen R. Fay, Meridian, ID (US); and Chan H. Yoo, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 6, 2023, as Appl. No. 18/106,225.
Application 18/106,225 is a continuation of application No. 16/896,043, filed on Jun. 8, 2020, granted, now 11,574,820.
Prior Publication US 2023/0187224 A1, Jun. 15, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/56 (2013.01) [H01L 21/78 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3114 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
electrically coupling a semiconductor die to a redistribution structure on a first carrier, the semiconductor die including a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure,
wherein the first carrier and the redistribution structure are coupled by a release layer between the first carrier and the redistribution structure;
reducing a thickness of the semiconductor die to no more than 10 μm;
coupling a flexible reinforcement structure to the second surface of the semiconductor die; and
separating the first carrier from the redistribution structure by dissolving the release layer or debonding the release layer from the redistribution structure.