US 11,990,346 B2
Method for clean procedure during manufacturing semiconductor device
Chuan-Chang Wu, Kaohsiung (TW); Zhen Wu, Kaohsiung (TW); Hsuan-Hsu Chen, Tainan (TW); and Chun-Lung Chen, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP, Hsinchu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsinchu (TW)
Filed on Aug. 2, 2021, as Appl. No. 17/391,075.
Claims priority of application No. 202110762385.5 (CN), filed on Jul. 6, 2021.
Prior Publication US 2023/0007939 A1, Jan. 12, 2023
Int. Cl. H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/32134 (2013.01) [H01L 29/66545 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for a clean procedure during manufacturing a semiconductor device, comprising:
providing a patterned sacrificial gate structure comprising a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed;
removing the sacrificial layer by performing a first etching process without etching the gate dielectric; and
removing a residue of the sacrificial layer by performing a hydrophilic treatment and a hydrophobic treatment,
wherein the hydrophilic treatment comprises a hydrophilic surface modification process, and the hydrophobic treatment comprises a hydrophobic surface modification process;
wherein the hydrophilic surface modification process comprises using an acidic oxidant, and the hydrophobic surface modification process comprises using a fluorinated acid;
wherein the hydrophilic treatment and the hydrophobic treatment are performed for at least 2 cycles.