CPC H01L 21/28575 (2013.01) [H01L 21/0331 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01)] | 20 Claims |
1. A method of manufacturing an electrode structure for a device, comprising:
forming an opening in a silicon nitride layer to expose a surface region of a substrate through the opening;
forming a photoresist layer over the silicon nitride layer and around the opening in the silicon nitride layer, the photoresist layer comprising a mask opening;
depositing a gate metal layer through the mask opening and onto the surface region of the substrate;
removing the photoresist layer; and
depositing a barrier metal layer over the gate metal layer and the silicon nitride layer.
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