US 11,990,338 B2
Optoelectronic device including a superlattice
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 9, 2023, as Appl. No. 18/167,019.
Application 18/167,019 is a continuation of application No. 17/650,506, filed on Feb. 9, 2022, granted, now 11,670,508.
Application 17/650,506 is a continuation of application No. 16/949,861, filed on Nov. 17, 2020, granted, now 11,282,704, issued on Mar. 22, 2022.
Application 16/949,861 is a continuation of application No. PCT/IB2019/054463, filed on May 29, 2019.
Claims priority of provisional application 62/682,005, filed on Jun. 7, 2018.
Prior Publication US 2023/0187206 A1, Jun. 15, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/02631 (2013.01) [H01L 21/02263 (2013.01); H01L 21/02554 (2013.01); H01L 21/0262 (2013.01); H01L 22/12 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising:
a substrate formed of magnesium oxide; and
a multi-region stack epitaxially deposited upon the substrate, wherein the multi-region stack comprises a non-polar crystalline material structure along a growth direction, wherein the multi-region stack comprises:
a first region comprising a crystal structure improvement layer;
a second region on the first region and comprising a first conductivity type;
a third region comprising an intrinsic conductivity type layer; and
a fourth region comprising a second conductivity type, the second conductivity type being opposite the first conductivity type, wherein the third region is between the second region and the fourth region;
wherein at least one region of the multi-region stack is a bulk semiconductor material comprising Mg(x)Zn(1-X)O;
wherein at least one region of the multi-region stack is a superlattice comprising MgO and Mg(X)Zn(1-X)O; and
wherein the Mg(X)Zn(1-X)O of the bulk semiconductor material or the superlattice is a non-polar rocksalt, and x >0.55.