US 11,990,335 B2
N-CO-doped semiconductor substrate
Bernard Beaumont, Le Tignet (FR); Jean-Pierre Faurie, Valbonne (FR); Vincent Gelly, Valbonne (FR); Nabil Nahas, Mougins (FR); and Florian Tendille, Mougins (FR)
Assigned to IVWORKS CO., LTD., Daejeon (KR)
Appl. No. 17/415,921
Filed by IVWORKS CO., LTD., Daejeon (KR)
PCT Filed Dec. 18, 2019, PCT No. PCT/EP2019/086123
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2020/127605, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 1873952 (FR), filed on Dec. 21, 2018.
Prior Publication US 2022/0068641 A1, Mar. 3, 2022
Int. Cl. H01L 29/15 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 31/0256 (2006.01)
CPC H01L 21/02389 (2013.01) [C30B 25/02 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, comprising the steps of:
deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, said layer comprising areas resulting from the growth of basal facets, having facets perpendicular to the direction of the growth front formed by the basal plane (0001), and areas resulting from the growth of facets of different orientations, called non-basal facets, having facets which are non-perpendicular to the direction of the growth front;
supply of a n-dopant gas comprising a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3,
wherein the semiconductor material has an atomic ratio (silicon+germanium)/oxygen comprised between 0.5 and 5.