CPC H01L 21/0228 (2013.01) [C23C 16/045 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/45536 (2013.01); C23C 16/50 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/76224 (2013.01)] | 20 Claims |
1. A method of filling one or more gaps on a surface of a substrate, the method comprising:
introducing a first reactant to the substrate with a first dose on a first area of the surface of the one or more gaps;
introducing a second reactant to the substrate with a second dose on a second area of the surface of the one or more gaps; and
introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first reactant in the first area or the second reactant in the second area,
wherein one of the first reactant and the second reactant comprise a potential growth reactant,
wherein the other of the first and second reactant is a low growth reactant, and
wherein a cyclical process including the third reactant reacting with the potential growth reactant is used to fill the one or more gaps.
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