US 11,990,333 B2
Method and apparatus for filling a gap
Viljami Pore, Helsinki (FI); Werner Knaepen, Leuven (BE); Bert Jongbloed, Oud-Heverlee (BE); Dieter Pierreux, Pepingen (BE); Gido van Der Star, Leuven (BE); and Toshiya Suzuki, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jun. 12, 2023, as Appl. No. 18/208,398.
Application 18/208,398 is a continuation of application No. 17/370,197, filed on Jul. 8, 2021, granted, now 11,694,892.
Application 17/370,197 is a continuation of application No. 16/827,506, filed on Mar. 23, 2020, granted, now 11,107,676, issued on Aug. 31, 2021.
Application 16/827,506 is a continuation of application No. 16/317,774, granted, now 10,741,385, issued on Aug. 11, 2020, previously published as PCT/IB2017/001015, filed on Jul. 14, 2017.
Application 16/317,774 is a continuation of application No. 15/222,715, filed on Jul. 28, 2016, granted, now 9,887,082, issued on Feb. 6, 2018.
Prior Publication US 2023/0335397 A1, Oct. 19, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/045 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/45536 (2013.01); C23C 16/50 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/76224 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of filling one or more gaps on a surface of a substrate, the method comprising:
introducing a first reactant to the substrate with a first dose on a first area of the surface of the one or more gaps;
introducing a second reactant to the substrate with a second dose on a second area of the surface of the one or more gaps; and
introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first reactant in the first area or the second reactant in the second area,
wherein one of the first reactant and the second reactant comprise a potential growth reactant,
wherein the other of the first and second reactant is a low growth reactant, and
wherein a cyclical process including the third reactant reacting with the potential growth reactant is used to fill the one or more gaps.