US 11,990,316 B2
Plasma processing apparatus and plasma processing method
Masaki Hirayama, Tokyo (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP); and TOHOKU UNIVERSITY, Miyagi (JP)
Appl. No. 17/299,588
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP); and TOHOKU UNIVERSITY, Miyagi (JP)
PCT Filed Nov. 26, 2019, PCT No. PCT/JP2019/046233
§ 371(c)(1), (2) Date Jun. 3, 2021,
PCT Pub. No. WO2020/116256, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-229230 (JP), filed on Dec. 6, 2018.
Prior Publication US 2021/0343501 A1, Nov. 4, 2021
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/321 (2013.01) [H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32577 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing container;
a stage provided within the processing container;
an upper electrode provided above a front surface of the stage, with a space within the processing container interposed therebetween;
a waveguide configured to introduce radio frequency waves in a VHF band or a UHF band into the space; and
a conductive part extending between an outer peripheral portion of the stage and a side wall of the processing container,
wherein the stage includes a metal layer,
the outer peripheral portion of the stage includes a part of the metal layer,
the waveguide includes an end portion from which the radio frequency waves are emitted,
the end portion is disposed so as to face the space,
the side wall is grounded, and
the conductive part is electrically connected to the metal layer and the side wall of the processing container, and extends from the outer peripheral portion toward the side wall so that the radio frequency waves emitted from the end portion are introduced into the space,
wherein the metal layer is exposed on a rear surface of the stage, and
the conductive part includes a flexible conductive plate, which is in electrical contact with the rear surface in the outer peripheral portion.