US 11,990,266 B2
Miniature transmission lines and related circuit components
Osman Ersed Akcasu, San Diego, CA (US)
Assigned to nanoHenry, Inc., San Diego, CA (US)
Filed by nanoHenry, Inc., San Diego, CA (US)
Filed on Nov. 1, 2022, as Appl. No. 17/978,783.
Application 17/978,783 is a division of application No. 15/285,310, filed on Oct. 4, 2016, granted, now 11,501,908.
Prior Publication US 2023/0069135 A1, Mar. 2, 2023
Int. Cl. H01F 5/00 (2006.01); H01F 27/28 (2006.01); H01F 27/29 (2006.01); H01F 41/04 (2006.01); H01G 4/005 (2006.01); H01G 4/232 (2006.01); H01G 4/236 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01); H01G 4/12 (2006.01)
CPC H01F 27/2804 (2013.01) [H01F 27/29 (2013.01); H01F 41/041 (2013.01); H01G 4/005 (2013.01); H01G 4/232 (2013.01); H01G 4/236 (2013.01); H01G 4/33 (2013.01); H01L 28/10 (2013.01); H01L 28/60 (2013.01); H01G 4/1245 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A miniature transmission line comprising:
a semiconductor substrate constraining a maximum size of the transmission line; and
a plurality of metal conductive legs overlying the semiconductor substrate, said metal conductive legs disposed with spacing therebetween;
the metal conductive legs being configured with a high aspect ratio defined as a thickness dimension greater than a width dimension and wherein the metal conductive legs are spaced to attain a tight coupling condition defined as a high coupling coefficient across multiple legs, wherein each of the metal conductive legs have a silicon core extending along a length of the metal conductive leg and metal extending along both sidewalls of the silicon core, and immediately adjacent metal conductive legs include a first leg and a second leg, the first leg and the second leg separated by a first metal extending along a first sidewall of the silicon core of the first leg and a second metal extending along a second sidewall of the silicon core of the second leg, the first metal and the second metal separated by a material having a composition that is different from that of the silicon core and different from that of the first metal and the second metal.