US 11,990,202 B2
Data recovery method for memory device
You-Liang Chou, Taichung (TW); and Wen-Jer Tsai, Hualien (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Oct. 19, 2022, as Appl. No. 18/047,661.
Prior Publication US 2024/0136009 A1, Apr. 25, 2024
Int. Cl. G11C 29/52 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); H10B 43/35 (2023.01)
CPC G11C 29/52 (2013.01) [G11C 11/5671 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/0483 (2013.01); H10B 43/35 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A data recovery method for a memory device, wherein the memory device comprises a plurality of word lines, a plurality of bit lines and a plurality of memory cells, the memory cells at least comprise a target memory cell, the word lines at least comprise a target word line and an adjacent word line, the adjacent word line is adjacent to the target word line, the target word line is connected to a gate of the target memory cell, the adjacent word line is connected to a gate of an adjacent memory cell, the adjacent memory cell is adjacent to the target memory cell, and the data recovery method comprising:
applying a first program voltage to the target memory cell through the target word line to adjust a threshold voltage of the target memory cell; and
when applying a first program voltage, concurrently applying a second program voltage to the adjacent memory cell through the adjacent word line to adjust a threshold voltage of the adjacent memory cell.