CPC G11C 17/18 (2013.01) [H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 27/0292 (2013.01); H02H 9/045 (2013.01); G11C 17/16 (2013.01)] | 18 Claims |
1. An integrated circuit, comprising:
a first power supply line to which a first power supply voltage can be supplied;
a protection circuit connected to the first power supply line;
an internal circuit including a first transistor, a drain or a source of the first transistor being connected to the first power supply line, a breakdown voltage of the first transistor being lower than the first power supply voltage;
a second transistor on the first power supply line between the protection circuit and the internal circuit and configured to switch between conduction and non-conduction states to connect and disconnect the protection circuit and the internal circuit from each other along the first power supply line; and
a shutoff control circuit configured to place the second transistor in the non-conduction state during an ESD operation, wherein
the shutoff control circuit includes:
a resistive element and a capacitive element connected in series between the first power supply line and a ground potential;
a first inverter having an input terminal connected to a node between the resistive element and the capacitive element; and
a third transistor having a gate connected to an output terminal of the first inverter, a drain connected to a gate of the second transistor, and a source connected to a ground potential.
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