US 11,990,174 B2
Method for detecting memory device, computer storage medium, and electronic device
Tianhao Diwu, Hefei (CN)
Assigned to Changxin Memory Technologies, Inc., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 28, 2022, as Appl. No. 17/851,530.
Claims priority of application No. 202210172861.2 (CN), filed on Feb. 24, 2022.
Prior Publication US 2023/0267985 A1, Aug. 24, 2023
Int. Cl. G11C 11/34 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/4078 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01)
CPC G11C 11/40618 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4078 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for detecting a memory device, comprising:
writing first data into memory cells connected to first target word lines;
writing second data into memory cells connected to second target word lines arranged between the first target word lines;
performing a first voltage adjustment on the memory cells connected to the first target word lines, to increase a voltage difference between the first target word lines and the second target word lines;
alternately turning on and off the second target word lines for a first preset number of times, upon completion of the first voltage adjustment;
performing a second voltage adjustment on the memory cells connected to the first target word lines, to increase the voltage difference between the first target word lines and the second target word lines;
alternately turning on and off the second target word lines for a second preset number of times, upon completion of the second voltage adjustment; and
performing a read operation on the memory cells connected to the first target word lines.