US 11,990,173 B2
Dynamic row hammering threshold for memory
Sujeet V. Ayyapureddi, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 27, 2022, as Appl. No. 17/809,144.
Claims priority of provisional application 63/365,735, filed on Jun. 2, 2022.
Prior Publication US 2023/0395120 A1, Dec. 7, 2023
Int. Cl. G11C 11/406 (2006.01)
CPC G11C 11/40618 (2013.01) [G11C 11/40615 (2013.01); G11C 11/40622 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining, at a memory device, that a quantity of activate operations performed within a refresh duration on a row of a plurality of rows satisfies a threshold quantity of activate operations, wherein each row of the plurality of rows is associated with a respective threshold quantity of activate operations;
updating a count of a quantity of rows of the plurality of rows that each satisfy the respective threshold quantity of activate operations based at least in part on determining that the quantity of activate operations performed on the row satisfies the threshold quantity of activate operations;
determining that the count of the quantity of rows satisfies a threshold quantity of rows within the refresh duration; and
setting a value of the threshold quantity of activate operations based at least in part on the count of the quantity of rows satisfying the threshold quantity of rows.