US 11,990,171 B2
Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells
Venkatesh P. Gopinath, Freemont, CA (US); and Pirooz Parvarandeh, Los Altos Hills, CA (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Feb. 15, 2022, as Appl. No. 17/671,652.
Prior Publication US 2023/0260561 A1, Aug. 17, 2023
Int. Cl. G11C 11/22 (2006.01)
CPC G11C 11/223 (2013.01) [G11C 11/2273 (2013.01); G11C 11/2275 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A structure comprising:
a first transistor;
a second transistor with an electric field-based programmable threshold voltage, wherein the first transistor and the second transistor are connected in series between a first voltage source line and a second voltage source line; and
a sense node at a junction between the first transistor and the second transistor,
wherein the first transistor has a first gate connected to a first wordline and the second transistor has a second gate connected to a second wordline, and
wherein operating modes vary depending upon voltage pulses on the first wordline, the second wordline, the first voltage source line, and the second voltage source line.