US 11,990,170 B2
Weak field stimulated skyrmion nucleation and manipulation for spintronic memory and processing devices
Binbin Wang, Columbus, OH (US); and David McComb, Columbus, OH (US)
Assigned to OHIO STATE INNOVATION FOUNDATION, Columbus, OH (US)
Filed by OHIO STATE INNOVATION FOUNDATION, Columbus, OH (US)
Filed on Mar. 14, 2022, as Appl. No. 17/693,551.
Claims priority of provisional application 63/187,470, filed on May 12, 2021.
Prior Publication US 2022/0366955 A1, Nov. 17, 2022
Int. Cl. G11C 11/16 (2006.01); G11C 11/18 (2006.01)
CPC G11C 11/1675 (2013.01) [G11C 11/161 (2013.01); G11C 11/18 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
generating a skyrmion memory in a spintronic material;
applying an in-plane magnetic field to the spintronic material; and
nucleating the skyrmion memory by manipulation of the in-plane magnetic field or spin current pulses,
wherein the spintronic material is a centrosymmetric magnet, Fe3Sn2, with an engineered thickness gradient.