US 11,990,167 B2
Magnetic tunnel junction device and method of forming same
Bo-Jhih Shen, Tainan (TW); Kuang-I Liu, Hsinchu (TW); Joung-Wei Liou, Zhudong Town (TW); Jinn-Kwei Liang, Yongkang (TW); Yi-Wei Chiu, Kaohsiung (TW); Chin-Hsing Lin, Chiayi (TW); Li-Te Hsu, Shanhua Township (TW); Han-Ting Tsai, Kaoshiung (TW); Cheng-Yi Wu, Taichung (TW); and Shih-Ho Lin, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 21, 2021, as Appl. No. 17/352,658.
Application 17/352,658 is a division of application No. 16/565,640, filed on Sep. 10, 2019, granted, now 11,043,251.
Claims priority of provisional application 62/773,398, filed on Nov. 30, 2018.
Prior Publication US 2021/0312965 A1, Oct. 7, 2021
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01)
CPC G11C 11/161 (2013.01) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); G01R 33/098 (2013.01); G11B 5/3909 (2013.01); G11C 2211/5615 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate;
a magnetic tunnel junction (MTJ) structure over the substrate, wherein the MTJ structure comprises:
a bottom electrode;
an MTJ stack over the bottom electrode; and
a top electrode over the MTJ stack;
an oxide layer on a sidewall of and in contact with the MTJ stack; and
a spacer on a sidewall of the MTJ structure, wherein the spacer is in physical contact with a sidewall of the bottom electrode, a sidewall of the top electrode and the oxide layer.