US 11,990,092 B2
Organic light-emitting display apparatus
Juwon Yoon, Yongin-si (KR); Iljeong Lee, Yongin-si (KR); Jiseon Lee, Yongin-si (KR); and Choongyoul Im, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-Si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Feb. 17, 2023, as Appl. No. 18/110,971.
Application 18/110,971 is a continuation of application No. 17/024,627, filed on Sep. 17, 2020, granted, now 11,620,943.
Application 17/024,627 is a continuation of application No. 16/377,627, filed on Apr. 8, 2019, granted, now 10,818,229, issued on Oct. 27, 2020.
Application 16/377,627 is a continuation of application No. 15/693,762, filed on Sep. 1, 2017, granted, now 10,255,853, issued on Apr. 9, 2019.
Application 15/693,762 is a continuation of application No. 14/674,707, filed on Mar. 31, 2015, granted, now 9,754,533, issued on Sep. 5, 2017.
Claims priority of application No. 10-2014-0122926 (KR), filed on Sep. 16, 2014.
Prior Publication US 2023/0197006 A1, Jun. 22, 2023
Int. Cl. H01L 27/12 (2006.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01)
CPC G09G 3/3233 (2013.01) [H01L 27/1222 (2013.01); H01L 27/124 (2013.01); H10K 59/1213 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/0262 (2013.01); H10K 59/1216 (2023.02); H10K 59/131 (2023.02)] 1 Claim
OG exemplary drawing
 
1. An organic light-emitting display apparatus, comprising:
a first scanning line;
a second scanning line;
a first voltage line;
a second voltage line; and
a pixel;
wherein:
the pixel comprises:
an organic light-emitting diode;
a semiconductor layer;
a first thin film transistor electrically connected to the organic light-emitting diode and the first voltage line;
a second thin film transistor electrically connected to the first thin film transistor and the first scanning line;
a third thin film transistor electrically connected to the second thin film transistor and the second voltage line, and electrically connected to the second scanning line; and
a fourth thin film transistor electrically connected to the third thin film transistor and the second voltage line;
the first thin film transistor, the second thin film transistor, the third thin film transistor, and the fourth thin film transistor are connected by the semiconductor layer;
the semiconductor layer is overlapped by the second scanning line in at least three portions; and
the second thin film transistor has two gate electrodes, which are a portion of the first scanning line and a portion protruding from the first scanning line, and overlap the semiconductor layer,
wherein:
a contact hole is defined in at least one insulating layer between the semiconductor layer and the second voltage line;
the contact hole is between the third thin film transistor and the fourth thin transistor in a plan view; and
the third thin film transistor and the fourth thin film transistor are connected to the second voltage line through the contact hole.