US 11,989,966 B2
Semiconductor devices and methods for forming the same
Hsin-Hui Lee, Kaohsiung (TW); Han-Liang Tseng, Hsinchu (TW); Jiunn-Liang Yu, Taipei (TW); Kwang-Ming Lin, Taichung (TW); Yin Chen, Hsinchu (TW); Si-Twan Chen, Jhubei (TW); Hsueh-Jung Lin, Jhubei (TW); Wen-Chih Lu, New Taipei (TW); and Chih-Hsien Chen, New Taipei (TW)
Assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed on Oct. 8, 2021, as Appl. No. 17/497,362.
Application 17/497,362 is a division of application No. 16/738,151, filed on Jan. 9, 2020, granted, now 11,177,397.
Prior Publication US 2022/0029035 A1, Jan. 27, 2022
Int. Cl. G06V 40/13 (2022.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01)
CPC G06V 40/13 (2022.01) [H01L 31/02016 (2013.01); H01L 31/02164 (2013.01); H01L 31/18 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
providing a substrate with a conductive pad formed thereon;
forming a transparent structure over the substrate, wherein the transparent structure comprises a plurality of collimating pillars adjacent to the conductive pad;
forming a light-shielding structure over the plurality of collimating pillars and the conductive pad, wherein the light-shielding structure is disposed between the plurality of collimating pillars and between the plurality of collimating pillars and the conductive pad;
performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material covering the conductive pad, wherein the one or more materials comprise a portion of the light-shielding structure; and
performing an etching process to remove the remaining material to expose the conductive pad.