US 11,989,646 B2
Neuromorphic apparatus having 3D stacked synaptic structure and memory device having the same
Jaechul Park, Yongin-si (KR); and Sangwook Kim, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 9, 2023, as Appl. No. 18/166,859.
Application 18/166,859 is a continuation of application No. 16/414,257, filed on May 16, 2019, granted, now 11,604,971.
Claims priority of provisional application 62/672,271, filed on May 16, 2018.
Claims priority of application No. 10-2018-0094616 (KR), filed on Aug. 13, 2018.
Prior Publication US 2023/0186066 A1, Jun. 15, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06N 3/063 (2023.01); G11C 13/00 (2006.01); H01L 25/065 (2023.01)
CPC G06N 3/063 (2013.01) [G11C 13/0023 (2013.01); G11C 13/003 (2013.01); H01L 25/0657 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A synaptic module of a neuromorphic apparatus having a three-dimensionally-stacked synaptic structure, the synaptic module comprising:
a first word line;
a first memory cell comprising a first metal disposed on the first word line, a ferroelectric disposed on the first metal, an insulator disposed on the ferroelectric, and a second metal disposed on the insulator;
a bit line is disposed on the second metal of the first memory cell;
a second memory cell comprising a second metal disposed on the bit line, an insulator disposed on the second metal of the second memory cell, a ferroelectric disposed on the insulator of the second memory cell, and a first metal disposed on the ferroelectric of the second memory cell; and
a second word line is disposed on the first metal of the second memory cell,
wherein the second metal, the insulator, the ferroelectric, and the first metal of the second memory cell are arranged sequentially in a direction from the bit line to the second word line, in an order of the second metal, the insulator, the ferroelectric, and the first metal.