US 11,989,644 B2
Three-dimensional convolution operation device and method based on three-dimensional phase change memory
Hao Tong, Hubei (CN); Qing Hu, Hubei (CN); Yuhui He, Hubei (CN); and Xiangshui Miao, Hubei (CN)
Assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Appl. No. 17/259,191
Filed by HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
PCT Filed May 28, 2020, PCT No. PCT/CN2020/092784
§ 371(c)(1), (2) Date Jan. 10, 2021,
PCT Pub. No. WO2021/073104, PCT Pub. Date Apr. 22, 2021.
Claims priority of application No. 201910994255.7 (CN), filed on Oct. 18, 2019.
Prior Publication US 2022/0351026 A1, Nov. 3, 2022
Int. Cl. G06N 3/0464 (2023.01); G06N 3/063 (2023.01); G11C 11/54 (2006.01); G11C 13/00 (2006.01)
CPC G06N 3/063 (2013.01) [G11C 11/54 (2013.01); G11C 13/0004 (2013.01); G11C 13/003 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A three-dimensional convolution operation device based on a three-dimensional phase change memory, characterized in comprising the three-dimensional phase change memory, an input control module, a setting module, and an output control module;
the three-dimensional phase change memory comprises an upper electrode, a lower electrode, a phase change unit, and a middle electrode, the input control module is connected to the upper electrode and the lower electrode respectively, the setting module is connected to the phase change unit, and the output control module is connected to the middle electrode;
the three-dimensional phase change memory is configured to simultaneously realize a convolution operation process of input information of the upper electrode and the lower electrode and respective convolution kernels as well as an addition process of convolution operation results based on its multilayer stack structure, thereby completing a three-dimensional convolution operation in one step;
the input control module is configured to divide two adjacent groups of input information into information blocks with the same number of columns as the three-dimensional phase change memory, and convert the information blocks into corresponding voltage amplitudes, and then simultaneously and sequentially input each group of the information block into the upper electrode and the lower electrode of the three-dimensional phase change memory;
the setting module is configured to adjust a conductance value of each phase change unit based on a value of the convolution kernel;
the output control module is configured to detect a current output by the middle electrode in the three-dimensional phase change memory and convert the current into voltage information, which is a result of the three-dimensional convolution operation.