US 11,989,496 B2
Method and structure for mandrel patterning
Chun-Yen Lin, Hsinchu (TW); Tung-Heng Hsieh, Hsinchu County (TW); and Bao-Ru Young, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 19, 2021, as Appl. No. 17/406,781.
Prior Publication US 2023/0057293 A1, Feb. 23, 2023
Int. Cl. G06F 30/392 (2020.01); G06F 30/33 (2020.01); G06F 30/398 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/33 (2020.01); G06F 30/398 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving an integrated circuit (IC) design layout including a layout block, the layout block including first line patterns disposed along a first direction;
extending lengths of the first line patterns;
connecting portions of the first line patterns disposed within a distance less than a preset value;
forming second line patterns disposed outside the layout block parallel to the first line patterns;
forming mandrel bar patterns overlapping edges of the layout block, the mandrel bar patterns oriented along a second direction perpendicular to the first direction; and
outputting a pattern layout for mask fabricating, wherein the pattern layout includes the layout block, the first and second line patterns, and the mandrel bar patterns.