| CPC G06F 30/17 (2020.01) [B24B 37/042 (2013.01); B24B 49/10 (2013.01); G06F 30/333 (2020.01); G06F 2115/10 (2020.01)] | 20 Claims |
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1. A method of generating a matrix to relate a plurality of controllable parameters of a chemical mechanical polishing system to a-polishing rate profile, the method comprising:
performing a one-factor-at-a time (OFAT) removal experimentation, where a total number of one or more test substrates used in the OFAT removal experimentation is less than a total number of the plurality of controllable parameters and, for at least one test substrate of the one or more test substrates, the test substrate is used for a plurality of experiments in the OFAT removal experimentation, each experiment in plurality of experiments defined by predetermined periods of time and predetermined values set prior to polishing a test substrate for the experiment, wherein performing the OFAT experimentation includes
polishing the test substrate of the one or more test substrates with a polishing pad in the chemical mechanical polishing system, including while maintaining the test substrate at the polishing pad,
for a first experiment of the plurality of experiments, polishing the test substrate for a first predetermined period of time using baseline parameter values of the OFAT removal experimentation for the plurality of controllable parameters, wherein the baseline parameter values include a first parameter set to a first predetermined value, and
for a second experiment of the plurality of experiments, polishing the test substrate for a second predetermined period of time using first modified parameter values of the OFAT removal experimentation for the plurality of controllable parameters, wherein the first modified parameters include the first parameter set to a modified, second predetermined value,
monitoring a thickness of the test substrate during polishing at each of a plurality of positions across the test substrate using an in-situ monitoring system, and
determining a baseline polishing rate profile for the first predetermined period of time and a first modified polishing rate profile for the second predetermined period of time based on thickness measurements by the in-situ monitoring system; and
generating a matrix relating the plurality of controllable parameters to the polishing rate profile of the chemical mechanical polishing system by calculating the matrix using the baseline parameter values, the first modified parameters, the baseline polishing rate profile and the first modified polishing rate profile.
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