US 11,989,443 B2
Techniques for enhanced read performance on repurposed blocks of memory cells
Chiara Cerafogli, Boise, ID (US); Carla L. Christensen, Boise, ID (US); Iolanda Del Villano, Villa di Briano (IT); Lalla Fatima Drissi, Ottaviano (IT); Anna Scalesse, Arzano (IT); and Maddalena Calzolari, Milan (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 12, 2022, as Appl. No. 17/663,139.
Prior Publication US 2023/0367504 A1, Nov. 16, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A memory system, comprising:
one or more memory devices, each memory device comprising a plurality of blocks of memory cells, wherein each block of memory cells comprises a plurality of pages, and wherein each page is associated with one of a first page type or a second page type, the first page type allowing for pages of different storage densities to share programming parameters and the second page type allowing for pages of a same storage density to share programming parameters; and
processing circuitry coupled with the one or more memory devices and configured to cause the memory system to:
select a first block of memory cells from the plurality of blocks of memory cells of a memory system based at least in part on a condition of the first block of memory cells being satisfied, wherein the first block of memory cells is at a first storage density;
update pages corresponding to the first block of memory cells from the second page type to the first page type based at least in part on selecting the first block of memory cells;
set, based at least in part on the first page type, one or more first programming parameters associated with the first block of memory cells to a first value that is within a threshold of a second value corresponding to one or more second programming parameters associated with a second block of memory cells at a second storage density, wherein the second storage density is greater than the first storage density; and
perform an operation on the first block of memory cells according to the one or more first programming parameters.