US 11,989,091 B2
Memory system for performing recovery operation, memory device, and method of operating the same
Younggul Song, Suwon-sl (KR); Byungchul Jang, Suwon-si (KR); Junyeong Seok, Suwon-si (KR); and Eun Chu Oh, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 13, 2022, as Appl. No. 17/965,091.
Claims priority of application No. 10-2021-0156056 (KR), filed on Nov. 12, 2021; and application No. 10-2022-0055022 (KR), filed on May 3, 2022.
Prior Publication US 2023/0153202 A1, May 18, 2023
Int. Cl. G06F 11/10 (2006.01); G06F 11/07 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/076 (2013.01); G06F 11/0793 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a memory system that comprises a memory device including a plurality of memory blocks and a memory controller, the method comprising:
detecting a first memory block having a degradation count greater than or equal to a first reference value from among the plurality of memory blocks by the memory controller;
transmitting a first command for the first memory block to the memory device by the memory controller; and
performing a recovery operation by applying a first voltage to all of a plurality of word lines connected to the first memory block and a second voltage to a bit line connected to the first memory block in response to the first command by the memory device, wherein:
the first voltage is greater than a voltage applied to turn on memory cells connected to all of the plurality of word lines connected to the first memory block; and
the second voltage is greater than a voltage applied to the bit line during a program operation, a read operation, or an erase operation performed on the memory device.