US 11,989,082 B2
Non-volatile memory device, method of operating the device, and memory system including the device
Heejin Kim, Suwon-si (KR); and Hyunjun Yoon, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 21, 2022, as Appl. No. 18/057,328.
Application 18/057,328 is a continuation of application No. 16/708,988, filed on Dec. 10, 2019, granted, now 11,507,448, issued on Nov. 22, 2022.
Claims priority of application No. 10-2019-0040340 (KR), filed on Apr. 5, 2019.
Prior Publication US 2023/0079939 A1, Mar. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 11/07 (2006.01); G06F 12/0882 (2016.01); G06F 13/16 (2006.01); G11C 7/10 (2006.01); G11C 11/4074 (2006.01); G11C 11/4093 (2006.01)
CPC G06F 11/0778 (2013.01) [G06F 11/0757 (2013.01); G06F 12/0882 (2013.01); G06F 13/1673 (2013.01); G11C 7/1039 (2013.01); G11C 7/1087 (2013.01); G11C 11/4074 (2013.01); G11C 11/4093 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile memory device comprising:
a memory cell array including a plurality of memory cells, each memory cell configured to be programmed to one state of a plurality of states;
a page buffer circuit including a plurality of page buffers, each page buffer configured to store received data as state data indicating a target state of a corresponding memory cell of the plurality of memory cells, the page buffer circuit being configured to perform a state data reordering operation of changing a first state data order indicating reference mapping between a plurality of data values of the state data and the plurality of states into a second state data order during at least one verification period among a plurality of verification period in which a verification operation is performed on selected memory cells of the plurality of memory cells; and
a reordering control circuit configured to control the page buffer circuit to perform the state data reordering operation simultaneously with the verification read operation.