	US 11,988,965 B2
	Underlayer for photoresist adhesion and dose reduction
Samantha S. H. Tan, Newark, CA (US); Jun Xue, San Jose, CA (US); Mary Anne Manumpil, Northridge, CA (US); Jengyi Yu, San Ramon, CA (US); and Da Li, Newark, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Oct. 26, 2021, as Appl. No. 17/452,365.
Application 17/452,365 is a continuation of application No. 17/310,635, granted, now 11,314,168, previously published as PCT/US2021/012953, filed on Jan. 11, 2021.
Claims priority of provisional application 62/961,647, filed on Jan. 15, 2020.
Prior Publication US 2022/0043334 A1, Feb. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/09 (2006.01); C23C 16/04 (2006.01); G03F 1/22 (2012.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01)

CPC G03F 7/094 (2013.01) [C23C 16/047 (2013.01); G03F 1/22 (2013.01); G03F 7/091 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/70033 (2013.01); H01L 21/02274 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01)]

42 Claims

1. A patterning structure, comprising:

a radiation-sensitive imaging layer disposed over a substrate; and

an underlayer disposed between the substrate and the imaging layer, the underlayer is configured to:

increase adhesion between the substrate and the imaging layer and

reduce a radiation dose for effective photoresist exposure of the imaging layer.

25. A method, comprising:

providing an underlayer on a substrate, the underlayer comprises a vapor deposited film of hydronated carbon;

spin-coating an organotin imaging layer on the underlayer;

exposing the organotin imaging layer to Extreme Ultraviolet (EUV) radiation; and

developing the organotin imaging layer using wet development.