US 11,988,964 B2
Positive resist composition for EUV lithography and method of forming resist pattern
Manabu Hoshino, Tokyo (JP)
Assigned to ZEON CORPORATION, Tokyo (JP)
Appl. No. 17/042,912
Filed by ZEON CORPORATION, Tokyo (JP)
PCT Filed Apr. 17, 2019, PCT No. PCT/JP2019/016445
§ 371(c)(1), (2) Date Sep. 29, 2020,
PCT Pub. No. WO2019/208354, PCT Pub. Date Oct. 31, 2019.
Claims priority of application No. 2018-086161 (JP), filed on Apr. 27, 2018.
Prior Publication US 2021/0026244 A1, Jan. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/039 (2006.01); C08F 212/08 (2006.01); C08F 220/24 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01)
CPC G03F 7/0392 (2013.01) [C08F 212/08 (2013.01); C08F 220/24 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01)] 7 Claims
 
1. A positive resist composition for EUV lithography comprising:
a copolymer including a monomer unit (A) represented by general formula (I), shown below,

OG Complex Work Unit Chemistry
where, in general formula (I), R1 is an organic group including 5 or more fluorine atoms, and a monomer unit (B) represented by general formula (II), shown below,

OG Complex Work Unit Chemistry
where, in general formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5; and
a solvent, wherein
the monomer unit (B) includes 4-fluoro-α-methylstyrene unit.