CPC G03F 7/0392 (2013.01) [C08F 212/08 (2013.01); C08F 220/24 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01)] | 7 Claims |
1. A positive resist composition for EUV lithography comprising:
a copolymer including a monomer unit (A) represented by general formula (I), shown below,
![]() where, in general formula (I), R1 is an organic group including 5 or more fluorine atoms, and a monomer unit (B) represented by general formula (II), shown below,
![]() where, in general formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5; and
a solvent, wherein
the monomer unit (B) includes 4-fluoro-α-methylstyrene unit.
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