CPC G03F 7/0042 (2013.01) [G03F 7/0043 (2013.01); G03F 7/09 (2013.01); G03F 7/20 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G03F 7/30 (2013.01); G03F 7/32 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01)] | 35 Claims |
1. A method for forming a patterned film supported by a substrate, the method comprising:
irradiating a layer of material supported by the substrate by exposing the layer of material to patterned radiation to form an irradiated structure with a region of irradiated material and a region with un-irradiated material, wherein the layer of material has a thickness in a range from about 1 nm to about 200 nm, wherein the un-irradiated material comprises a metal oxo-hydroxo network with metal cations having organic ligands with metal carbon bonds and/or with metal carboxylate bonds, and wherein the irradiated material is at least partially condensed to increase metal oxide character; and
developing the irradiated structure to selectively remove irradiated material or un-irradiated material to form the patterned film supported by the substrate.
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