US 11,988,953 B2
EUV masks to prevent carbon contamination
Pei-Cheng Hsu, Taipei (TW); Ta-Cheng Lien, Hsinchu County (TW); and Hsin-Chang Lee, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 6, 2023, as Appl. No. 18/151,416.
Application 18/151,416 is a continuation of application No. 17/532,939, filed on Nov. 22, 2021, granted, now 11,561,464.
Application 17/532,939 is a continuation of application No. 16/746,640, filed on Jan. 17, 2020, granted, now 11,221,554, issued on Jan. 11, 2022.
Prior Publication US 2023/0152681 A1, May 18, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01); G03F 1/22 (2012.01)
CPC G03F 1/24 (2013.01) [G03F 1/22 (2013.01)] 20 Claims
 
1. A method, comprising:
forming a multi-layered reflective layer over a substrate;
depositing a metal capping layer over the multi-layered reflective layer;
depositing a first metal oxide layer over the metal capping layer;
depositing a metal nitride layer over the first metal oxide layer;
depositing a second metal oxide layer over the metal nitride layer; and
forming a plurality of features on the second metal oxide layer and the metal nitride layer.