US 11,988,906 B2
Waveguide structure
Chan-Hong Chern, Palo Alto, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,370.
Application 17/873,370 is a continuation of application No. 16/865,586, filed on May 4, 2020, granted, now 11,415,820.
Prior Publication US 2022/0365378 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G02F 1/025 (2006.01); G02B 6/12 (2006.01); G02F 1/225 (2006.01); G02F 1/21 (2006.01)
CPC G02F 1/025 (2013.01) [G02B 6/12 (2013.01); G02F 1/225 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12142 (2013.01); G02F 1/212 (2021.01); G02F 2201/063 (2013.01); G02F 2203/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A phase-shifting device, comprising:
an insulating layer; and
a semiconductor waveguide layer disposed on the insulating layer and comprising:
a waveguide portion having a p-n junction or p-i-n junction, the p-n junction or p-i-n junction comprising a p-doped portion and an n-doped portion disposed relative to each other along a first direction, the p-doped portion and n-doped portion each having an area with a first dimension along a second direction substantially parallel to the insulating layer and perpendicular to the first direction, and a second dimension along a third direction substantially perpendicular to the insulating layer and the first direction; and
a pair of slab portions, each adjacent to, and extending from, a corresponding one of the p-doped and n-doped portions in the first direction and having a cross-sectional area substantially parallel to the area of the corresponding one of the p-doped and n-doped portions, the cross-sectional area varying in size with distance from the corresponding one of the p-doped and n-doped portions along the first direction, the slab portion adjacent the p-doped portion of the p-n or p-i-n junction being p-doped having a p-dopant concentration higher than that of the p-doped portion, and the slab portion adjacent the n-doped portion of the p-n or p-i-n junction being n-doped and having an n-dopant concentration higher than that of the n-doped portion,
each of the pair of the slab portions having a top surface opposite the insulating layer from across the slab portion, the top surface comprising a sloped planar portion oriented at an oblique angle relative to the insulating layer and along a crystallographic plane.