US 11,988,702 B2
Method and system for inspection of defective MTJ cell in STT-MRAM
Yun Heub Song, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Appl. No. 17/044,185
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
PCT Filed Mar. 26, 2019, PCT No. PCT/KR2019/003490
§ 371(c)(1), (2) Date Sep. 30, 2020,
PCT Pub. No. WO2019/194450, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 10-2018-0039035 (KR), filed on Apr. 4, 2018; application No. 10-2018-0039036 (KR), filed on Apr. 4, 2018; and application No. 10-2019-0009649 (KR), filed on Jan. 25, 2019.
Prior Publication US 2021/0132134 A1, May 6, 2021
Int. Cl. G01R 31/12 (2020.01); G11C 11/16 (2006.01); G11C 29/50 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC G01R 31/1218 (2013.01) [G11C 11/161 (2013.01); G11C 29/50 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 21 Claims
OG exemplary drawing
 
1. An inspection method of a system inspecting reliability of dielectric film quality of a magnetic tunnel junction (MTJ) cell, the inspection method comprising:
applying a unipolar signal and a bipolar signal to an MTJ cell of spin-transfer torque magnetic random access memory (STT-MRAM);
comparing a cycling gap between a characteristic of the unipolar signal and a characteristic of the bipolar signal, the characteristics being generated from the MTJ cell; and
inspecting a dielectric thin film of the MTJ cell based on a comparison result.