US 11,988,689 B2
Insulated current sensor
Bruno Boury, Tessenderlo (BE); Robert Racz, Bevaix (CH); Antonio Cacciato, Tessenderlo (BE); and Jian Chen, Tessenderlo (BE)
Assigned to MELEXIS TECHNOLOGIES SA, Bevaix (CH)
Filed by Melexis Technologies SA, Bevaix (CH)
Filed on Oct. 27, 2022, as Appl. No. 17/974,869.
Application 17/974,869 is a continuation of application No. 16/662,378, filed on Oct. 24, 2019, granted, now 11,506,688.
Claims priority of application No. 18202389 (EP), filed on Oct. 24, 2018.
Prior Publication US 2023/0049864 A1, Feb. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 15/14 (2006.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC G01R 15/148 (2013.01) [H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02)] 9 Claims
OG exemplary drawing
 
1. An integrated sensor die having a first and a second major surface, the second major surface being opposite to the first major surface;
the integrated sensor die comprising at least one magnetic field sensing element arranged on said first major surface of the integrated sensor die and suitable for sensing a magnetic field caused by a current flow;
wherein the integrated sensor die comprises a first insulation layer positioned between the first major surface and the second major surface such that it is substantially buried in the integrated sensor die;
wherein the integrated sensor die comprises a semiconductor-insulator-semiconductor substrate, wherein the insulator forms the first insulation layer and is bounded by a semiconductor material on both sides.