US 11,988,561 B2
Method for producing a thermal infrared sensor array in a vacuum-filled wafer-level housing
Jörg Schieferdecker, Dresden (DE); Frank Herrmann, Dohna (DE); Christian Schmidt, Dresden (DE); Wilhelm Leneke, Taunusstein (DE); Bodo Forg, Mainz (DE); Marion Simon, Bad Schwalbach (DE); and Michael Schnorr, Hünstetten-Wallbach (DE)
Assigned to Heimann Sensor GmbH, Dresden (DE)
Appl. No. 17/624,938
Filed by Heimann Sensor GmbH, Dresden (DE)
PCT Filed Jul. 9, 2020, PCT No. PCT/EP2020/069354
§ 371(c)(1), (2) Date Jan. 5, 2022,
PCT Pub. No. WO2021/005150, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 10 2019 118 586.6 (DE), filed on Jul. 9, 2019.
Prior Publication US 2022/0283034 A1, Sep. 8, 2022
Int. Cl. G01J 5/02 (2022.01); G01J 5/04 (2006.01); G01J 5/0802 (2022.01); G01J 5/12 (2006.01); H01L 27/146 (2006.01); G01J 5/10 (2006.01)
CPC G01J 5/12 (2013.01) [G01J 5/045 (2013.01); G01J 5/0802 (2022.01); H01L 27/14618 (2013.01); H01L 27/14632 (2013.01); H01L 27/14649 (2013.01); H01L 27/14687 (2013.01); G01J 2005/106 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for producing a thermal infrared sensor array in a vacuum-filled wafer-level housing comprising at least two wafers,
a cover wafer (1) and
a central wafer (3) having a plurality of infrared-sensitive pixels (5) respectively on a slitted membrane (5″) over a thermally insulating cavity (11),
the method comprising:
initially providing the cover wafer (1) on an inner side with at least one cavity (10);
firmly mechanically connecting the cover wafer (1) to the central wafer (3) having the plurality of infrared-sensitive pixels (5) by wafer bonding;
subsequently thinning the central wafer (3) from a backside of the wafer to a predetermined thickness;
fastening a bottom wafer (4) on the backside of the central wafer (3) by wafer bonding; and
thinning the bottom wafer (4) after the wafer bonding.