	US 11,988,534 B2
	Thermopile sensor
Takashi Kasai, Kyoto (JP); and Koji Momotani, Kyoto (JP)
Assigned to MMI SEMICONDUCTOR CO., LTD., Tokyo (JP)
Appl. No. 17/905,273
Filed by MMI SEMICONDUCTOR CO., LTD., Tokyo (JP)
PCT Filed Dec. 15, 2020, PCT No. PCT/JP2020/046684 § 371(c)(1), (2) Date Aug. 30, 2022, PCT Pub. No. WO2021/176793, PCT Pub. Date Sep. 10, 2021.
Claims priority of application No. 2020-035134 (JP), filed on Mar. 2, 2020.
Prior Publication US 2023/0101259 A1, Mar. 30, 2023
Int. Cl. G01F 1/688 (2006.01); G01F 1/684 (2006.01); G01F 1/696 (2006.01); H10N 10/851 (2023.01); G01F 1/692 (2006.01); G01F 15/04 (2006.01); G01J 5/12 (2006.01); G01K 7/02 (2021.01); G01P 5/10 (2006.01)

CPC G01F 1/6888 (2013.01) [G01F 1/6845 (2013.01); G01F 1/696 (2013.01); H10N 10/851 (2023.02)]

10 Claims

1. A thermopile sensor comprising: a thermopile; wherein the thermopile is formed by connecting thermocouples, in series on an insulating film, in which a first PolySi interconnect and a metal interconnect including a metal portion in at least a part thereof are connected, the thermocouples connected in series are arranged side by side with a predetermined gap, the metal interconnect is arranged to overlap the first PolySi interconnect in each of the thermocouples, at a connection portion between a thermocouple and an adjacent thermocouple, the metal interconnect crosses the gap between first PolySi interconnects, and a first width of a portion of the gap where the metal interconnect crosses the gap between the first PolySi interconnects is greater than a second width of a remaining portion of the gap between the first PolySi interconnects.