US 11,987,903 B2
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
Kenji Iso, Tokyo (JP); Tatsuya Takahashi, Tokyo (JP); Tae Mochizuki, Tokyo (JP); and Yuuki Enatsu, Tokyo (JP)
Assigned to MITSUBISHI CHEMICAL CORPORATION, Tokyo (JP)
Filed by MITSUBISHI CHEMICAL CORPORATION, Tokyo (JP)
Filed on Feb. 16, 2021, as Appl. No. 17/176,237.
Application 17/176,237 is a continuation of application No. PCT/JP2019/028991, filed on Jul. 24, 2019.
Claims priority of application No. 2018-153432 (JP), filed on Aug. 17, 2018; application No. 2019-059630 (JP), filed on Mar. 27, 2019; and application No. 2019-080810 (JP), filed on Apr. 22, 2019.
Prior Publication US 2021/0164127 A1, Jun. 3, 2021
Int. Cl. B32B 3/00 (2006.01); C23C 16/34 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01)
CPC C30B 29/406 (2013.01) [C23C 16/34 (2013.01); C30B 25/20 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An n-type GaN crystal, having two main surfaces facing opposite directions from each other, wherein
one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane,
the n-type GaN crystal has a diameter of 45 mm or larger,
when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1 mm intervals, an average value of all the measured (004) XRD rocking curve FWHM values is 18 arcsec or less, and
the n-type GaN crystal satisfies at least one condition of the following (a) to (c) regarding impurity concentrations:
(a) a concentration of Si is 5×1016 atoms/cm3 or higher;
(b) a concentration of O is 3×1016 atoms/cm3 or lower; and
(c) a concentration of H is 1×1017 atoms/cm3 or lower.