CPC C30B 29/406 (2013.01) [C23C 16/34 (2013.01); C30B 25/20 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01)] | 19 Claims |
1. An n-type GaN crystal, having two main surfaces facing opposite directions from each other, wherein
one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane,
the n-type GaN crystal has a diameter of 45 mm or larger,
when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1 mm intervals, an average value of all the measured (004) XRD rocking curve FWHM values is 18 arcsec or less, and
the n-type GaN crystal satisfies at least one condition of the following (a) to (c) regarding impurity concentrations:
(a) a concentration of Si is 5×1016 atoms/cm3 or higher;
(b) a concentration of O is 3×1016 atoms/cm3 or lower; and
(c) a concentration of H is 1×1017 atoms/cm3 or lower.
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