US 11,987,891 B2
Sensor in an internet-of-things
Ming-Ta Lei, Hsin-Chu (TW); Chia-Hua Chu, Hsinchu County (TW); Hsin-Chih Chiang, Hsinchu (TW); Tung-Tsun Chen, Hsinchu (TW); and Chun-Wen Cheng, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 20, 2022, as Appl. No. 17/844,080.
Application 16/706,054 is a division of application No. 14/879,018, filed on Oct. 8, 2015, granted, now 10,508,345, issued on Dec. 17, 2019.
Application 17/844,080 is a continuation of application No. 16/706,054, filed on Dec. 6, 2019, granted, now 11,414,763.
Prior Publication US 2022/0333251 A1, Oct. 20, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 33/00 (2006.01); C23F 4/00 (2006.01); G01N 27/12 (2006.01)
CPC C23F 4/00 (2013.01) [G01N 27/128 (2013.01); G01N 33/0075 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A gas sensor, comprising:
a substrate;
a conductor layer over the substrate, wherein the conductor layer comprises a conductive pattern comprising a plurality of openings, the openings being arranged in a repeating pattern;
an insulating layer in the plurality of openings fay contacting sidewalls of the conductor layer and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer; and
a gas sensing film over a portion of the insulating layer.