US 11,987,882 B2
Silicon carbide thin films and vapor deposition methods thereof
Barry C. Arkles, Pipersville, PA (US); and Alain E. Kaloyeros, Slingerlands, NY (US)
Assigned to GELEST, INC., Morrisville, PA (US)
Filed by Gelest, Inc., Morrisville, PA (US)
Filed on Sep. 27, 2021, as Appl. No. 17/486,286.
Claims priority of provisional application 63/085,617, filed on Sep. 30, 2020.
Prior Publication US 2022/0098732 A1, Mar. 31, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/45536 (2013.01) [C23C 16/0209 (2013.01); C23C 16/325 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for producing an as-deposited SiC thin film containing not more than 1 atomic % hydrogen onto a substrate in a reaction zone of a deposition chamber, the method comprising:
providing a substrate in a reaction zone of a deposition chamber;
heating the substrate to a temperature of about 700° C. to about 850° C.; and
providing a precursor comprising 1,3,5,7-tetrasilanonane; tricyclo[3.3.1.13,7]pentasilane;
1,3-disilacyclobutane; 1,3,5-trisilacyclohexane (TSCH); or 1,3,5,7-tetrasilacyclooctane in the vapor phase without a carrier gas to the reaction zone containing the substrate while maintaining the substrate at about 700° C. to about 850° C.;
wherein a partial pressure of the precursor in the deposition chamber is maintained at about 10% to about 100% of a total pressure in the reaction zone; and
wherein a layer of SiC containing not more than 1 atomic % hydrogen is formed on a substrate surface by adsorption and decomposition of the precursor;
wherein the adsorption and decomposition occur on the substrate surface without the presence of any other reactive chemical species or co-reactants.