US 11,987,880 B2
Manufacturing method and inspection method of interior member of plasma processing apparatus
Kazuhiro Ueda, Tokyo (JP); Masaru Kurihara, Tokyo (JP); Kazuyuki Ikenaga, Tokyo (JP); and Tomoyuki Tamura, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 16/979,671
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Dec. 23, 2019, PCT No. PCT/JP2019/050252
§ 371(c)(1), (2) Date Sep. 10, 2020,
PCT Pub. No. WO2021/130797, PCT Pub. Date Jul. 1, 2021.
Prior Publication US 2023/0101039 A1, Mar. 30, 2023
Int. Cl. C23C 16/44 (2006.01); C23C 4/134 (2016.01); G01N 23/20 (2018.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC C23C 16/4404 (2013.01) [C23C 4/134 (2016.01); G01N 23/20 (2013.01); H01J 37/32495 (2013.01); H01L 21/3065 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A manufacturing method of an interior member which is arranged inside a processing chamber disposed inside a vacuum container of a plasma processing apparatus configured to process a wafer by using plasma formed in the processing chamber, and which includes, on a surface of said interior member, a first film of a material having resistance to the plasma, the manufacturing method of the interior member comprising:
a step of forming the first film by spraying the material onto the surface of the interior member by moving a gun by a predetermined distance along the surface of the interior member, and forming a second film by spraying the material on a surface of a test piece which has a shape simulating a surface shape of the interior member and which is disposed within a range of the predetermined distance, by moving the gun within the predetermined distance; and
a step of adjusting a condition of forming the first film on the surface of the interior member by the gun, based on a result of detecting at least one of a crystal size of the second film on the surface of the test piece, a residual stress, and a contaminant element.