	US 11,987,878 B2
	Chemical vapor deposition processes using ruthenium precursor and reducing gas
Philip S. H. Chen, Bethel, CT (US); Bryan C. Hendrix, Danbury, CT (US); and Thomas H. Baum, New Fairfield, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on May 13, 2022, as Appl. No. 17/744,240.
Application 17/744,240 is a continuation of application No. 16/673,470, filed on Nov. 4, 2019, granted, now 11,371,138.
Claims priority of provisional application 62/757,356, filed on Nov. 8, 2018.
Prior Publication US 2022/0267895 A1, Aug. 25, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/06 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 18/42 (2006.01); C23C 18/44 (2006.01); H01L 21/285 (2006.01)

CPC C23C 16/18 (2013.01) [C23C 16/02 (2013.01); C23C 16/06 (2013.01); C23C 18/42 (2013.01); C23C 18/44 (2013.01); H01L 21/28568 (2013.01)]

20 Claims

1. A method for selectively depositing ruthenium on a substrate in a chemical vapor deposition process comprising:

vaporizing a ruthenium precursor of the Formula I: R¹R²Ru(0), wherein R¹is an aryl group-containing ligand, and R²is a diene group-containing ligand; and

contacting the substrate with the vaporized ruthenium precursor and a reducing gas, wherein the substrate comprises a first, conductive material and a second, less conductive material and ruthenium is preferentially deposited on the first, conductive material compared with deposition on the second, less conductive material.