US 11,987,874 B2
Backside metal formation methods and systems
Michael J. Seddon, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jan. 23, 2019, as Appl. No. 16/254,904.
Prior Publication US 2020/0232086 A1, Jul. 23, 2020
Int. Cl. C23C 14/18 (2006.01); C23C 14/24 (2006.01); C23C 14/58 (2006.01)
CPC C23C 14/18 (2013.01) [C23C 14/243 (2013.01); C23C 14/5873 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a metal layer on a semiconductor wafer, the method comprising:
placing a semiconductor wafer into an evaporator dome, the semiconductor wafer comprising an average thickness of less than 39 microns;
adding a material to a crucible located a predetermined distance from the semiconductor wafer;
heating the material in the crucible to a vapor; and
depositing the material on a second side of the semiconductor wafer.